In-situ TEM demonstrates low current and fast switching Ru memristor

Researchers at the University of Massachusetts, Amherst, Argonne National Laboratory, Korea Institute of Science and Technology, and Hewlett Packard Labs have demonstrated low current and fast switching capability in Ru-ion-mediated memristor device for the first time. The work was performed using Hummingbird Scientific’s TEM Biasing Manipulator holder and published in a prestigious journal, Advanced Materials.

In-situ TEM images of Pd/Pt (top)/Ta2O5/Ru(bottom) structure device in pristine high resistance state (HRS) and low resistance state (LRS). The current-voltage (IV) curves show low current switching mediated Ru mobile species. Image Copyright © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Ru memristor device was brought in contact with Au tip using the mobile probe of the TEM Biasing Manipulator holder and I-V measurement was performed by capturing high-resolution in-situ TEM images simultaneously. The data showed that the low current switching behavior is triggered by the movement of Ru ions back-and-forth in oxides (Ta2O5) during applied biasing polarity. The work demonstrates the high-performance capability of Ru-based memristor devices for the first time.

Reference: Jung Ho Yoon, Jiaming Zhang, Peng Lin, Navnidhi Upadhyay, Peng Yan, Yuzi Liu, Qiangfei Xia, J. Joshua Yang, A Low‐Current and Analog Memristor with Ru as Mobile Species,” Advanced Materials (2020). Full Paper

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