|Tilt Range||±45° depending on microscope and pole piece|
|Number of Electrical Contacts||6, 8, or 9 *|
|Contact Type||Flexible wirebond contacts or fixed spring contact|
|Chip Carrier||Mobile Chip Carrier|
|Carrier Compatibility||Standard TEM Sample Supports|
|Carrier Size||Fits up to 3 x 6mm samples|
|Wiring||Standard or low-noise shielded|
|TEM Compatibility||FEI, JEOL, Hitachi, Zeiss|
Hummingbird Scientific’s in-situ electrical biasing holder allows researchers to investigate the electrical response of materials inside the transmission electron microscope. The standard biasing holder has a removable chip carrier that accommodates a wide range of TEM sample geometries. This design allows convenient sample preparation outside the holder and is compatible with all of Hummingbird Scientific’s membrane substrates. Low-noise wiring ensures accurate measurements.
- Correlating the electrical properties of nanoscale material and microstructures
- Studying the relationship between material defect populations and electrical responses
- Electromigration studies
- Operating microelectomechanical systems (MEMS) based mechanical testing devices
- In-situ testing of solid-state energy devices
Board Contact (Type I)
This contact configuration features a removable, reusable sample carrier which allows researchers to prepare the sample directly on the board.
Direct Chip Contact (Type II)
This contact configuration features a single chip that is directly inserted into the holder via a proprietary connector with up to 9 electrical contacts.
Spring Contact (Type III)
The spring contact configuration is a variation of the Type I connector, but instead of flexible wire-bonded contacts between the sample carrier and chip, it has fixed-location spring contacts.
Void Formation Induced Electrical Switching in Phase-Change Nanowires
Voltage-current curve and accompanying in-situ TEM micrographs of void formation in GeTe single-nanowire devices as part of an induced phase change.
Left: TEM images taken in-situ during the voltage scan at times I, II, III, and IV.
Right: In-situ TEM voltage scan of a single nanowires device. Note the correlation of resistance with void size in the nanowire on the left.
Reference: S. Meister, D.T. Schoen, M.A. Topinka, A.M. Minor, and Y. Cui. “Void Formation Induced Electrical Switching in Phase-Change Nanowires,” Nano Letters 8 (2008) pp. 4562. Abstract
Image courtesy of Yi Cui (Stanford University) and Andrew Minor (UC Berkeley).
Copyright © 2008, American Chemical SocietyEdit
Using our electrical biasing holder, researchers at Penn State have demonstrated the room temperature dislocation-based plasticity and tremendous flaw tolerance of TiN film, which in bulk form is a brittle material. TiN loading was conducted using a MEMS device containing electro-thermal actuators. The researchers surmise that room-temperature dislocation activities resulted from the nucleation of pre-existing dislocations, which resulted from residual compressive stresses developed during deposition. As a result, the TiN films were tougher than the Ti films in the tested multilayers. The movie shows the dislocation movement at the crack tip following loading at room temperature.
Reference: S. Kumar, D.E. Wolfe, M.A Haque. “Dislocation shielding and flaw tolerance in titanium nitride,” International Journal of Plasticity 27:5 (2011) pp. 739–747 . Abstract
Movie copyright © 2010, Elsevier Ltd. All rights reserved.Edit
Customization & Service
|Nathanael Jöhrmann, Steffen Hartmann, Kiran Jacob, Jens Bonitz, Kathrine E. MacArthur, Sascha Hermann, Stefan E. Schulz, Bernhard Wunderle. “A test device for in situ TEM investigations on failure behaviour of carbon nanotubes embedded in metals under tensile load,” 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (2017)||Abstract|
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|M.L. Taheri. “Toward Deterministic Switching in Ferroelectric Systems: Insight Gained from In-Situ TEM,” Microscopy and Microanalysis (2015)||Abstract|
|M.-S. Hsiao, Y. Yuan, C. Grabowski, A. Nie, R. Shabazian-Yassar, L.F. Drummy. “In-Situ TEM Characterization of Nanostructured Dielectrics,” Microscopy and Microanalysis (2015)||Abstract|
|W.A. Hubbard, E.R. White, A. Kerelsky, G. Jasmin, J. Lodico. “Time-Resolved Imaging of Electrochemical Switching in Nanoscale Resistive Memory Elements,” Microscopy and Microanalysis (2015)||Abstract|
|B.C. Regan, W.A. Hubbard, E.R. White, R. Dhall, S.B. Cronin, S. Aloni, M. Mecklenburg. “Introduction to Plasmon Energy Expansion Thermometry,” Microscopy and Microanalysis (2015)||Abstract|
|M.H. Mecklenburg, W.A. Hubbard, E.R. White, R. Dhall, S. Cronin, S. Aloni, B.C. Regan. “Applications of Plasmon Energy Expansion Thermometry,” Microscopy and Microanalysis (2015)||Abstract|
|M. Mecklenburg, W. A. Hubbard,E. R. White, Rohan Dhall, S. B. Cronin, S. Aloni, and B. C. Regan“Nanoscale temperature mapping in operating microelectronic devices “, Science (2015)||Abstract|
|M. Puster, J.A. Rodríguez-Manzo, A. Balan, M. Drndić. “Toward Sensitive Graphene Nanoribbon-Nanopore Devices by Preventing Electron Beam-Induced Damage,” ACS Nano (2013)||Abstract|
|E. Hosseinan, O.N. Pierron, “Quantitative in situ TEM tensile fatigue testing on nanocrystalline metallic ultrathin films,” Nanoscale (2013)||Abstract|
|C.R. Winkler, M.L. Jablonski, A.R. Damodaran, K. Jambunathan, L.W. Martin, M.L. Taheri. “Accessing Intermediate Ferroelectric Switching Regimes With Time-Resolved Transmission Electron Microscopy,” Journal of Applied Physics (2012)||Abstract|
|C.R. Winkler, A.R. Damodaran, J. Karthik, L.W. Martin, M.L. Taheri. “Direct Observation of Ferroelectric Domain Switching in Varying Electric Field Regimes Using In-Situ TEM,” Micron (2012)||Abstract|
|S. Kumar, D.E. Wolfe, M.A. Haque. “Dislocation Shielding and Flaw Tolerance in Titanium Nitride,” International Journal of Plasticity (2011)||Abstract|
|S. Kumar, D. Zhuo, D.E. Wolfe, A. Eades, M.A. Haque. “Length-Scale Effects on Fracture of Multilayers,” Scripta Materialia (2010)||Abstract|
|C.M. Wang, W. Xu, J. Liu, D.W. Choi, B. Arey, L.V. Saraf, J.G. Zhang, Z.G. Yang, S. Thevuthasan, D.R. Baer, N. Salmon. “In-situ transmission electron microscopy and spectroscopy studies of interfaces in Li ion batteries: Challenges and opportunities,” Journal of Materials Research(2010)||Abstract|
|S. Kumar, M.A. Haque. “Fracture Testing of Nanoscale Thin Films inside the Transmission Electron Microscope,” International Journal of Applied Mechanics (2010)||Abstract|
|D.T. Schoen, S. Meister, H. Peng, C. Chan, Y. Yangb, Y. Cuia. “Phase transformations in one-dimensional materials: applications in electronics and energy sciences,” Journal of Materials Chemistry (2009)||Abstract|
|H. Minoda, K. Hatano, H. Yazawa. “Development of a surface conductivity measurement system for ultrahigh vacuum transmission electron microscope,” Review of Scientific Instruments (2009)||Abstract|
|S. Kumar, M.A. Haque, H. Gao. “Notch-Insensitive Fracture in Nanoscale Thin Films,” Applied Physics Letters (2009)||Abstract|
|S. Meister, D.T. Schoen, M.A. Topinka, A.M. Minor, Y. Cui. ”Void Formation Induced Electrical Switching in Phase-Change Nanowires,”Nano Letters (2008)||Abstract|
|H. Peng, C. Xie, D.T. Schoen, and Y. Cui. “Large Anisotropy of Electrical Properties in Layer-Structured In2Se3 Nanowires,” Nano Letters (2008)||Abstract|