|Tilt Range||±45° depending on microscope and pole piece|
|Number of Electrical Contacts||6, 8, or 9 *|
|Contact Type||Flexible wirebond contacts or fixed spring contact|
|Chip Carrier||Mobile Chip Carrier|
|Carrier Compatibility||Standard TEM Sample Supports|
|Carrier Size||Fits up to 3 x 6mm samples|
|Wiring||Standard or low-noise shielded|
|TEM Compatibility||FEI, JEOL, Hitachi, Zeiss|
Hummingbird Scientific’s in-situ electrical biasing holder allows researchers to investigate the electrical response of materials inside the transmission electron microscope. The standard biasing holder has a removable chip carrier that accommodates a wide range of TEM sample geometries. This design allows convenient sample preparation outside the holder and is compatible with all of Hummingbird Scientific’s membrane substrates. Low-noise wiring ensures accurate measurements.
- Correlating the electrical properties of nanoscale material and microstructures
- Studying the relationship between material defect populations and electrical responses
- Electromigration studies
- Operating microelectomechanical systems (MEMS) based mechanical testing devices
- In-situ testing of solid-state energy devices
Board Contact (Type I)
This contact configuration features a removable, reusable sample carrier which allows researchers to prepare the sample directly on the board.
Direct Chip Contact (Type II)
This contact configuration features a single chip that is directly inserted into the holder via a proprietary connector with up to 9 electrical contacts.
Spring Contact (Type III)
The spring contact configuration is a variation of the Type I connector, but instead of flexible wire-bonded contacts between the sample carrier and chip, it has fixed-location spring contacts.
Void Formation Induced Electrical Switching in Phase-Change Nanowires
Voltage-current curve and accompanying in-situ TEM micrographs of void formation in GeTe single-nanowire devices as part of an induced phase change.
Left: TEM images taken in-situ during the voltage scan at times I, II, III, and IV.
Right: In-situ TEM voltage scan of a single nanowires device. Note the correlation of resistance with void size in the nanowire on the left.
Reference: S. Meister, D.T. Schoen, M.A. Topinka, A.M. Minor, and Y. Cui. “Void Formation Induced Electrical Switching in Phase-Change Nanowires,” Nano Letters 8 (2008) pp. 4562. Abstract
Image courtesy of Yi Cui (Stanford University) and Andrew Minor (UC Berkeley).
Copyright © 2008, American Chemical SocietyEdit
Using our electrical biasing holder, researchers at Penn State have demonstrated the room temperature dislocation-based plasticity and tremendous flaw tolerance of TiN film, which in bulk form is a brittle material. TiN loading was conducted using a MEMS device containing electro-thermal actuators. The researchers surmise that room-temperature dislocation activities resulted from the nucleation of pre-existing dislocations, which resulted from residual compressive stresses developed during deposition. As a result, the TiN films were tougher than the Ti films in the tested multilayers. The movie shows the dislocation movement at the crack tip following loading at room temperature.
Reference: S. Kumar, D.E. Wolfe, M.A Haque. “Dislocation shielding and flaw tolerance in titanium nitride,” International Journal of Plasticity 27:5 (2011) pp. 739–747 . Abstract
Movie copyright © 2010, Elsevier Ltd. All rights reserved.Edit
Customization & Service
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|C.R. Winkler, M.L. Jablonski, A.R. Damodaran, K. Jambunathan, L.W. Martin, M.L. Taheri. “Accessing Intermediate Ferroelectric Switching Regimes With Time-Resolved Transmission Electron Microscopy,” Journal of Applied Physics (2012)||Abstract|
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|S. Kumar, D.E. Wolfe, M.A. Haque. “Dislocation Shielding and Flaw Tolerance in Titanium Nitride,” International Journal of Plasticity (2011)||Abstract|
|S. Kumar, D. Zhuo, D.E. Wolfe, A. Eades, M.A. Haque. “Length-Scale Effects on Fracture of Multilayers,” Scripta Materialia (2010)||Abstract|
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|S. Kumar, M.A. Haque. “Fracture Testing of Nanoscale Thin Films inside the Transmission Electron Microscope,” International Journal of Applied Mechanics (2010)||Abstract|
|D.T. Schoen, S. Meister, H. Peng, C. Chan, Y. Yangb, Y. Cuia. “Phase transformations in one-dimensional materials: applications in electronics and energy sciences,” Journal of Materials Chemistry (2009)||Abstract|
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