Hummingbird Scientific Electrical Biasing TEM Holder with wirebonded 6-pin chip

Electrical Biasing

Technical Specs

TEM Sample Holder - Electrical Biasing - FEI Model
  1600 Series
Tilt Range ±45° depending on microscope and pole piece
Number of Electrical Contacts 6, 8, or 9 *
Contact Type Flexible wirebond contacts or fixed spring contact
Chip Carrier Mobile Chip Carrier
Carrier Compatibility Standard TEM Sample Supports
Carrier Size Fits up to 3 x 6mm samples
Wiring Standard or low-noise shielded
TEM Compatibility FEI, JEOL, Hitachi, Zeiss

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Features

Featured Research

Void Formation Induced Electrical Switching in Phase-Change Nanowires

Voltage-current curve and accompanying in-situ TEM micrographs of void formation in GeTe single-nanowire devices as part of an induced phase change.

Left: TEM images taken in-situ during the voltage scan at times I, II, III, and IV.

Right: In-situ TEM voltage scan of a single nanowires device. Note the correlation of resistance with void size in the nanowire on the left.

Reference:  S. Meister, D.T. Schoen, M.A. Topinka, A.M. Minor, and Y. Cui. “Void Formation Induced Electrical Switching in Phase-Change Nanowires,” Nano Letters 8 (2008) pp. 4562. Abstract

Image courtesy of Yi Cui (Stanford University) and Andrew Minor (UC Berkeley).

Copyright © 2008, American Chemical Society

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Video Spotlight

Using our electrical biasing holder, researchers at Penn State have demonstrated the room temperature dislocation-based plasticity and tremendous flaw tolerance of TiN film, which in bulk form is a brittle material. TiN loading was conducted using a MEMS device containing electro-thermal actuators. The researchers surmise that room-temperature dislocation activities resulted from the nucleation of pre-existing dislocations, which resulted from residual compressive stresses developed during deposition. As a result, the TiN films were tougher than the Ti films in the tested multilayers. The movie shows the dislocation movement at the crack tip following loading at room temperature.

Reference: S. Kumar, D.E. Wolfe, M.A Haque. “Dislocation shielding and flaw tolerance in titanium nitride,” International Journal of Plasticity 27:5 (2011) pp. 739–747 . Abstract

Movie copyright © 2010, Elsevier Ltd.  All rights reserved.

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Selected Publications

Nathanael Jöhrmann, Steffen Hartmann, Kiran Jacob, Jens Bonitz, Kathrine E. MacArthur, Sascha Hermann, Stefan E. Schulz, Bernhard Wunderle. “A test device for in situ TEM investigations on failure behaviour of carbon nanotubes embedded in metals under tensile load,” 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (2017) Abstract
E. Hosseinan, O.N. Pierron, Quantitative in situ TEM tensile fatigue testing on nanocrystalline metallic ultrathin films,” Nanoscale, Issue 24 2013, 5, 12532-12541 Abstract
J.J. Lodico, E.R. White, W.A. Hubbard, E. Garcia, B. Parks, B. Zutter, B.C. Regan. In-Situ Scanning Transmission Electron Microscopy (STEM) of Individual Electrochemical Intercalculation Events in Graphite,” Microscopy and Microanalysis Meeting (2015)
M.L. Taheri. Toward Deterministic Switching in Ferroelectric Systems: Insight Gained from In-Situ TEM,” Microscopy and Microanalysis Meeting (2015)
M.-S. Hsiao, Y. Yuan, C. Grabowski, A. Nie, R. Shabazian-Yassar, L.F. Drummy.In-Situ TEM Characterization of Nanostructured Dielectrics,” Microscopy and Microanalysis Meeting (2015)
W.A. Hubbard, E.R. White, A. Kerelsky, G. Jasmin, J. Lodico. Time-Resolved Imaging of Electrochemical Switching in Nanoscale Resistive Memory Elements,” Microscopy and Microanalysis Meeting (2015)
B.C. Regan, W.A. Hubbard, E.R. White, R. Dhall, S.B. Cronin, S. Aloni, M. Mecklenburg. Introduction to Plasmon Energy Expansion Thermometry,” Microscopy and Microanalysis Meeting (2015)
M.H. Mecklenburg, W.A. Hubbard, E.R. White, R. Dhall, S. Cronin, S. Aloni, B.C. Regan. Applications of Plasmon Energy Expansion Thermometry,” Microscopy and Microanalysis Meeting (2015)
M. Mecklenburg, W. A. Hubbard,E. R. White, Rohan Dhall, S. B. Cronin, S. Aloni, and B. C. ReganNanoscale temperature mapping in operating microelectronic devices, Science vol. 347 iss. 6222, (2015) pp. 629-632. Abstract
H. Peng, C. Xie, D.T. Schoen, and Y. Cui. Large Anisotropy of Electrical Properties in Layer-Structured In2SeNanowires,” Nano Letters 8:5 (2008) pp. 15111516 Abstract
M. Puster, J.A. Rodríguez-Manzo, A. Balan, M. Drndić. “Toward Sensitive Graphene Nanoribbon-Nanopore Devices by Preventing Electron Beam-Induced Damage,” ACS Nano 7:12 (2013) pp. 11283–11289 Abstract
C.R. Winkler, M.L. Jablonski, A.R. Damodaran, K. Jambunathan, L.W. Martin, M.L. Taheri. Accessing Intermediate Ferroelectric Switching Regimes With Time-Resolved Transmission Electron Microscopy, J. Applied Physics 112:5 (2012) Abstract
C.R. Winkler, A.R. Damodaran, J. Karthik, L.W. Martin, M.L. Taheri. Direct Observation of Ferroelectric Domain Switching in Varying Electric Field Regimes Using In-Situ TEM, Micron 43:11 (2012) pp. 1121–1126 Abstract
S. Kumar, D.E. Wolfe, M.A. Haque. “Dislocation Shielding and Flaw Tolerance in Titanium Nitride”, International Journal of Plasticity 27:5 (2011) pp. 739–747 Abstract
S. Kumar, D. Zhuo, D.E. Wolfe, A. Eades, M.A. Haque. “Length-Scale Effects on Fracture of Multilayers,” Scripta Materialia 63:2 (2010) pp. 196–199 Abstract
C.M. Wang, W. Xu, J. Liu, D.W. Choi, B. Arey, L.V. Saraf, J.G. Zhang, Z.G. Yang, S. Thevuthasan, D.R. Baer, N. Salmon. “In-situ transmission electron microscopy and spectroscopy studies of interfaces in Li ion batteries: Challenges and opportunities,” J. Mater. Res. 25:8 (2010) pp. 1541–1547. Abstract
S. Kumar, M.A. Haque. “Fracture Testing of Nanoscale Thin Films inside the Transmission Electron Microscope,” International Journal of Applied Mechanics 2:4 (2010) pp. 745 Abstract
D.T. Schoen, S. Meister, H. Peng, C. Chan, Y. Yangb, Y. Cuia. “Phase transformations in one-dimensional materials: applications in electronics and energy sciences,” Journal of Materials Chemistry 19 (2009) pp. 5879–5890 Abstract
H. Minoda, K. Hatano, H. Yazawa. “Development of a surface conductivity measurement system for ultrahigh vacuum transmission electron microscope,” Rev. Sci. Instruments 80 (2009) pp. 113702 Abstract
S. Kumar, M.A. Haque, H. Gao. “Notch-Insensitive Fracture in Nanoscale Thin Films,” Applied Physics Letters 94:25 (2009) Abstract
S. Meister, D.T. Schoen, M.A. Topinka, A.M. Minor, Y. Cui.  ”Void Formation Induced Electrical Switching in Phase-Change Nanowires,”Nano Letters 8:12 (2008) pp. 4562–4567 Abstract
H. Peng, C. Xie, D.T. Schoen, and Y. Cui. “Large Anisotropy of Electrical Properties in Layer-Structured In2Se3 Nanowires,” Nano Letters 8:5 (2008) pp. 15111516 Abstract

 

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